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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHTA44ZPT CURRENT 0.3 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * NPN SILICON Transistor 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 1 B 2 C 3 E Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. 450 400 6.0 300 2 +150 150 +150 UNIT V V V mA W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHTA44ZPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current CONDITIONS VCB = 400 V VEB=4.0V IC = 1.0 mA; V CE = 10V IC = 10mA; VCE = 10V IC = 50 mA; VCE =10V IC = 100 mA; VCE =10V - - 40 50 45 20 MIN. MAX. 100 100 - 200 - - UNIT nA nA DC current gain VCEsat collector-emitter saturation voltage IC = 1.0 mA; IB= 0.1m A -10 IC = mA; IB = 1.0 m A IC =50mA; IB =5.0mA - - - - - - 20 0.40 0.50 0.75 0.75 7.0 130 - V V V V pF pF MHz VBEsat Cob CIb fT -10 base-emitter saturation voltage IC = mA; IB = 1.0 m A collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = 2 0 V; f = 1 MHz VEB=0.5V,IC=0,f=1.0MHZ IC = 10 mA; VCE = 1 0 V; f = 10 MHz |
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